Effect of Al2O3 capping layer on suppression of interfacial SiO2 growth in HfO2/ultrathin SiO2/Si(001) structure

被引：21

作者：

Kundu, M ^{[1
]}

Miyata, N

Nabatame, T

Horikawa, T

Ichikawa, M

Toriumi, A

机构：

[1] AIST, MIRAI Project, ASRC, Tsukuba, Ibaraki 3058562, Japan

[2] Assoc Super Adv Elect Technol, MIRAI Project, Tsukuba, Ibaraki 3058569, Japan

[3] Univ Tokyo, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 20期

关键词：

D O I：

10.1063/1.1576293

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effect a 1.2-nm-thick Al2O3 capping layer had on suppressing interfacial Si oxidation in a 2.6-nm-HfO2/0.35-nm-SiO2/Si(001) structure during postdeposition annealing in an oxygen ambient. An incubation period (IP) was initially observed during which the HfO2/Si interface exhibited remarkable stability without any interfacial SiO2 growth. This was then followed by very slow interface oxidation. Our detailed study suggested that low oxidant diffusion through the capping layer determined the effective IP. Furthermore, HfO2/Si interface oxidation, which proceeded through a two-step process that was similar to an uncapped structure, was severely constrained by the limited availability of oxygen at the Al2O3/HfO2 interface. (C) 2003 American Institute of Physics.

引用

页码：3442 / 3444

页数：3

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