Defect-controlled transport properties of metallic atoms along carbon nanotube surfaces

被引：34

作者：

Barinov, Alexei

Uestuenel, Hande

Fabris, Stefano

Gregoratti, Luca

Aballe, Lucia

Dudin, Pavel

Baroni, Stefano

Kiskinova, Maya

机构：

[1] Sincrotrone Trieste, I-34012 Trieste, Italy

[2] SISSA, I-34014 Trieste, Italy

[3] CNR, Elettra Grp, INFM, DEMOCRITOS Theory, I-34014 Trieste, Italy

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.99.046803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The diffusion mechanism of indium atoms along multiwalled carbon nanotubes is studied by means of photoemission spectromicroscopy and density functional theory calculations. The unusually high activation temperature for diffusion (approximate to 700 K), the complex C 1s and In 3d(5/2) spectra, and the calculated adsorption energies and diffusion barriers suggest that the indium transport is controlled by the concentration of defects in the C network and proceeds via hopping of indium adatoms between C vacancies.

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页数：4

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