Electronic and Structural Properties of SnxTi1-xO2 (0.0 ≤ x ≤ 0.1) Solid Solutions

被引：56

作者：

Harunsani, M. Hilni ^{[1
]}

Oropeza, Freddy E. ^{[1
]}

Palgrave, Robert G. ^{[1
]}

Egdell, Russell G. ^{[1
]}

机构：

[1] Univ Oxford, Inorgan Chem Lab, Dept Chem, Oxford OX1 3QR, England

来源：

CHEMISTRY OF MATERIALS | 2010年 / 22卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

SN-DOPED TIO2; DIFFUSE-REFLECTANCE ANALYSIS; PHOTOCATALYTIC ACTIVITY; THIN-FILMS; TITANIUM-DIOXIDE; PHASE-TRANSFORMATION; SURFACE-PROPERTIES; OPTICAL-PROPERTIES; SENSING PROPERTIES; TIO2-SNO2; SYSTEM;

D O I：

10.1021/cm902970u

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic and structural properties of dilute solid solutions of SnO2 in TiO2 have been investigated. Samples of SnxTi1-xO2 with 0.0 <= x <= 0.1 (i.e., 0-10% Sn doping) were prepared by solid state reaction of SnO2 and TiO2 powders at 1200 degrees C followed by rapid quenching. Narrowing of the bandgap at low Sn doping level was observed through both diffuse reflectance spectroscopy and valence band photoemission spectroscopy. This provides an explanation of the visible light photocatalytic activity previously reported for this system. X-ray diffraction showed a positive deviation of the lattice parameters from Vegard's Law, whereas Raman spectra revealed a red-shift in the E-g and B-1g peaks and a blue-shift in the A(1g) peak with increasing Sn content.

引用

页码：1551 / 1558

页数：8

共 61 条

[51] Fabrication and humidity sensing properties of nanostructured TiO2-SnO2 thin films [J].

Tai, WP ;

Oh, JH .

SENSORS AND ACTUATORS B-CHEMICAL, 2002, 85 (1-2) :154-157

[52] COMPARISON OF THE ENERGIES OF VANADIUM DONOR LEVELS IN DOPED SNO2 AND TIO2 [J].

TAVERNER, AE ;

RAYDEN, C ;

WARREN, S ;

GULINO, A ;

COX, PA ;

EGDELL, RG .

PHYSICAL REVIEW B, 1995, 51 (11) :6833-6837

[53] CHARACTERIZATION OF TIN OXIDES BY X-RAY-PHOTOEMISSION SPECTROSCOPY [J].

THEMLIN, JM ;

CHTAIB, M ;

HENRARD, L ;

LAMBIN, P ;

DARVILLE, J ;

GILLES, JM .

PHYSICAL REVIEW B, 1992, 46 (04) :2460-2466

[54] RESONANT-PHOTOEMISSION STUDY OF SNO2 - CATIONIC ORIGIN OF THE DEFECT BAND-GAP STATES [J].

THEMLIN, JM ;

SPORKEN, R ;

DARVILLE, J ;

CAUDANO, R ;

GILLES, JM ;

JOHNSON, RL .

PHYSICAL REVIEW B, 1990, 42 (18) :11914-11925

[55] Effect of Bond Ionicity on the Bandgap Bowing in Compound Semiconductor Alloys [J].

Tit, Nacir ;

Obaidat, Ihab M. ;

Alawadhi, Hussain .

JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2009, 6 (07) :1646-1653

[56] Crystal growth of metastable rutile-type TixSn1-xO2 solid solutions in an aqueous system [J].

Uchiyama, H ;

Imai, H .

CHEMICAL COMMUNICATIONS, 2005, (48) :6014-6016

[57] ENHANCED RATES OF PHOTOCATALYTIC DEGRADATION OF AN AZO-DYE USING SNO2/TIO2 COUPLED SEMICONDUCTOR THIN-FILMS [J].

VINODGOPAL, K ;

KAMAT, PV .

ENVIRONMENTAL SCIENCE & TECHNOLOGY, 1995, 29 (03) :841-845

[58] Band parameters for III-V compound semiconductors and their alloys [J].

Vurgaftman, I ;

Meyer, JR ;

Ram-Mohan, LR .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :5815-5875

[59] Mixed oxides as gas sensors [J].

Zakrzewska, K .

THIN SOLID FILMS, 2001, 391 (02) :229-238

[60] Effect of Nb, Cr, Sn additions on gas sensing properties of TiO2 thin films [J].

Zakrzewska, K ;

Radecka, M ;

Rekas, M .

THIN SOLID FILMS, 1997, 310 (1-2) :161-166

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