Structure and optoelectronic properties of Si/O superlattice

被引:10
作者
Dovidenko, K
Lofgren, JC
de Freitas, F
Seo, YJ
Tsu, R
机构
[1] SUNY Albany, Sch NanoSci & NanoEngn, Albany, NY 12222 USA
[2] Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA
[3] Daebul Univ, Dept Elect Engn, Chonnam Do 526890, South Korea
[4] NanoDynam Inc, New York, NY 10021 USA
关键词
Si/O superlattice; transmission electron microscopy; electroluminescence; photoluminescence;
D O I
10.1016/S1386-9477(02)00631-8
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have carried out structural study of the Si/O semiconductor atomic superlattices (SAS) with up to 18 Si/O layers fabricated by molecular beam epitaxy and in situ oxygen exposure on both Sb-doped and undoped Si buffer layers, and correlated the results with our photoluminescence, electroluminescence (EL) and I-V data. The Si/O SAS is a new type of superlattice, where monolayers of oxygen are sandwiched between the Si layers. High-resolution cross-sectional transmission electron microscopy (TEM) study has confirmed the presence of the superlattice and shown epitaxy in the Si/O superlattices. The high structural quality of the layers grown on the undoped Si buffer layers with low density of stacking faults-less than 10(7)/cm(2) -was established by TEM. Although structure perfection is very important allowing this new class of superlattices to be extended to other systems, it is important to point out that a 9-period SAS-based EL device with emission of light in green has been life-tested with stable output for over I year of continuous operation. The Si/O superlattice also serves as an epitaxially grown insulating layer as possible replacement of silicon-on-insulator. Together with the tailor-made effective band gap, this epitaxially grown superlattice may serve as future silicon-based three-dimensional integrated circuits. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:509 / 516
页数:8
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