Stability of CdSe and ZnSe dots self-organized on semiconductor surfaces

被引：32

作者：

Suemune, I ^{[1
]}

Tawara, T ^{[1
]}

Saitoh, T ^{[1
]}

Uesugi, K ^{[1
]}

机构：

[1] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 060, Japan

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 26期

关键词：

D O I：

10.1063/1.120534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Several monolayers (ML) of CdSe were deposited on (001) GaAs surfaces to study the stability of the CdSe films. The CdSe film with the 2 ML thickness showed atomically flat surfaces just after the growth. However, in three days after the growth, self-organization into dots at room temperature was clearly observed. This unexpected self-organization of dots observed at room temperature from the once coherently-grown CdSe film will be closely correlated to the enhancement of the heterointerface diffusion observed in this combination of CdSe and GaAs. This correlation between the stability of the dots and the heterointerface diffusion was examined in the common cation case of ZnZe/ZnS, which is known to show low interface diffusion. Self-organization of ZnSe dots was observed with an atomic force microscope on (001) ZnS surfaces. The ZnSe dots were stable as expected and did not show instability such as observed for the CdSe dots on GaAs or on ZnSe. (C) 1997 American Institute of Physics.

引用

页码：3886 / 3888

页数：3

共 16 条

[1] Self-organized CdSe quantum dots on (100)ZnSe/GaAs surfaces grown by metalorganic molecular beam epitaxy [J].

Arita, M ;

Avramescu, A ;

Uesugi, K ;

Suemune, I ;

Numai, T ;

Machida, H ;

Shimoyama, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B) :4097-4101

[2] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[3]

FLACK F, 1996, PHYS REV B, V54, pR1731

[4]

FURDYNA JK, 1997, INT S QUANT STRUCT P

[5]

FURDYNA JK, 1997, COMMUNICATION

[6] Self-organized CdSe quantum dots onto cleaved GaAs(110) originating from Stranski-Krastanow growth mode [J].

Ko, HC ;

Park, DC ;

Kawakami, Y ;

Fujita, S ;

Fujita, S .

APPLIED PHYSICS LETTERS, 1997, 70 (24) :3278-3280

[7] EFFECTS OF LATTICE MISMATCH ON CRYSTALLOGRAPHIC PROPERTIES OF ZNS GROWN ON GAP AND GAAS BY MOCVD [J].

MITSUISHI, I ;

MITSUHASHI, H ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01) :L15-L17

[8] Luminescence of excitons localized by monolayer interface fluctuations in ZnSe/MgS superlattices grown by metalorganic vapor phase epitaxy [J].

Nashiki, H ;

Suemune, I ;

Suzuki, H ;

Uesugi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B) :4199-4203

[9] MEASUREMENT OF THE SIZE-DEPENDENT HOLE SPECTRUM IN CDSE QUANTUM DOTS [J].

NORRIS, DJ ;

SACRA, A ;

MURRAY, CB ;

BAWENDI, MG .

PHYSICAL REVIEW LETTERS, 1994, 72 (16) :2612-2615

[10] HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY DETERMINATION OF CD DIFFUSION IN CDSE/ZNSE SINGLE-QUANTUM-WELL STRUCTURES [J].

ROSENAUER, A ;

REISINGER, T ;

STEINKIRCHNER, E ;

ZWECK, J ;

GEBHARDT, W .

JOURNAL OF CRYSTAL GROWTH, 1995, 152 (1-2) :42-50

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