Kelvin probe force microscopy on InAs thin films on (110) GaAs substrates

被引：7

作者：

Takahashi, T

Kawamukai, T

Ono, S

Noda, T

Sakaki, H

机构：

[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

[2] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 6B期

关键词：

Kelvin probe force microscopy; surface potential; Fermi level; electron accumulation; quantum confinement;

D O I：

10.1143/JJAP.39.3721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface potential distributions on InAs thin films grown on (110) GaAs substrates were studied by Kelvin probe force microscopy. The topography showed that their surfaces were covered by many terraces. The surface Fermi levels (E-FS) were evaluated from the potential images, and EFS near the terrace edge was higher than that on the terrace top, while both of them were above the conduction band edge of bulk InAs. These results indicate that the electrons are more concentrated near the terrace edge. The film thickness dependence of EFS was also studied, but the quantum confinement effects in the InAs thin films were not confirmed experimentally.

引用

页码：3721 / 3723

页数：3

共 11 条

[1] Surface evolution in GaAs(110) homoepitaxy; from microscopic to macroscopic morphology [J].