Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition

被引：125

作者：

Miyazaki, S ^{[1
]}

Hamamoto, Y ^{[1
]}

Yoshida, E ^{[1
]}

Ikeda, M ^{[1
]}

Hirose, M ^{[1
]}

机构：

[1] Hiroshima Univ, Dept Elect Engn, Higashihiroshima 7398527, Japan

来源：

THIN SOLID FILMS | 2000年 / 369卷 / 1-2期

关键词：

self-assembling; silicon dots; low-pressure chemical vapor deposition; nucleation; selective growth; atomic force microscope;

D O I：

10.1016/S0040-6090(00)00834-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of nanometer-scale silicon dots on ultrathin SiO2 layers has been studied by controlling the early stages of low-pressure chemical vapor deposition (LPCVD) of a monosilane gas. It has been suggested that the thermal dissociation of surface Si-O bonds plays a role in creation of nucleation sites on as-grown SiO2 and that surface Si-OH bonds formed by a dilute HF treatment or pure water immersion act as nucleation sites during LPCVD. By spatially controlling OH-termination on the SiO2 surface before LPCVD, the selective growth of Si dots has been demonstrated. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：55 / 59

页数：5

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