Modeling and analysis of high-speed electro-optic modulation in high confinement silicon waveguides using metal-oxide-semiconductor configuration

被引：61

作者：

Barrios, CA ^{[1
]}

Lipson, M

机构：

[1] Univ Politecn Valencia, Nanophoton Technol Ctr, Valencia 46022, Spain

[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1814791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We analyze the electrical and optical properties of a silicon electro-optic waveguide modulator using a metal-oxide-semiconductor (MOS) configuration. The device performance is studied under different modes of operation of the MOS diode and gate oxide thicknesses. Our calculations indicate that this scheme can be used for achieving high-speed submicron waveguide active devices on silicon on insulator. A microring resonator intensity modulator is predicted to exhibit switching times on the order of tens of picoseconds with modulation depth of 73% by employing a bias voltage of only 5 V. (C) 2004 American Institute of Physics.

引用

页码：6008 / 6015

页数：8

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