Optical properties of Si-rich SiO2 films in relation with embedded Si mesoscopic particles

被引:83
作者
Hayashi, S
Yamamoto, K
机构
[1] Dept. of Elec. and Electronics Eng., Faculty of Engineering, Kobe University, Rokkodai, Nada
关键词
optical properties; SiO2; films; embedded Si particles;
D O I
10.1016/0022-2313(96)00070-1
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Optical properties of Si-rich SiO2 films prepared by an RF cosputtering method are discussed. From the infrared and Raman spectroscopy together with the electron microscopy, it is shown that Si mesoscopic particles embedded in solid matrices with the sizes ranging from similar to 10 nm (nanocrystals) to less than similar to 1 nm (clusters) can be obtained by the cosputtering and post-annealing. The absorption and photoluminescence spectra are presented. For our samples, a red luminescence peak analogous to that of porous Si is observed for films containing Si clusters rather than nanocrystals. Raman spectra which evidence the success in the heavy doping of B atoms into Si nanocrystals are also discussed.
引用
收藏
页码:352 / 363
页数:12
相关论文
共 26 条
  • [11] SIZE DEPENDENCE OF EXCITONS IN SILICON NANOCRYSTALS
    HILL, NA
    WHALEY, KB
    [J]. PHYSICAL REVIEW LETTERS, 1995, 75 (06) : 1130 - 1133
  • [12] KAMIMURA H, 1994, J PHYS SOC JAPAN SB, V63
  • [13] MICROSTRUCTURE AND OPTICAL-PROPERTIES OF FREESTANDING POROUS SILICON FILMS - SIZE DEPENDENCE OF ABSORPTION-SPECTRA IN SI NANOMETER-SIZED CRYSTALLITES
    KANEMITSU, Y
    UTO, H
    MASUMOTO, Y
    MATSUMOTO, T
    FUTAGI, T
    MIMURA, H
    [J]. PHYSICAL REVIEW B, 1993, 48 (04): : 2827 - 2830
  • [14] Raman spectroscopy of Si-rich SiO2 films: Possibility of Si cluster formation
    Kanzawa, Y
    Hayashi, S
    Yamamoto, K
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (26) : 4823 - 4835
  • [15] KANZAWA Y, IN PRESS SOLID STATE
  • [16] KIM HM, 1994, JPN J APPL PHYS 2, V34, P40
  • [18] INFRARED-ABSORPTION SPECTRA AND COMPOSITIONS OF EVAPORATED SILICON-OXIDES (SIOX)
    NAKAMURA, M
    MOCHIZUKI, Y
    USAMI, K
    ITOH, Y
    NOZAKI, T
    [J]. SOLID STATE COMMUNICATIONS, 1984, 50 (12) : 1079 - 1081
  • [19] ANNEALING CHARACTERISTICS OF SI-RICH SIO2-FILMS
    NESBIT, LA
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 38 - 40
  • [20] INFRARED SPECTROSCOPIC STUDY OF SIOX FILMS PRODUCED BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
    PAI, PG
    CHAO, SS
    TAKAGI, Y
    LUCOVSKY, G
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 689 - 694