Gallium nitride-based potentiometric anion sensor

被引：35

作者：

Chaniotakis, NA ^{[1
]}

Alifragis, Y

Konstantinidis, G

Georgakilas, A

机构：

[1] Univ Crete, Dept Chem, Analyt Chem Lab, GR-71409 Iraklion, Crete, Greece

[2] FORTH, IESL, MRG, Iraklion 71110, Crete, Greece

[3] Univ Crete, Dept Phys, Iraklion, Crete, Greece

来源：

ANALYTICAL CHEMISTRY | 2004年 / 76卷 / 18期

关键词：

D O I：

10.1021/ac049476h

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The gallium nitride (GaN) semiconductor is used as the sensing element for the development of a potentiometric anion sensor. The anion recognition mechanism is based on the selective interaction of anions in solution with the epitaxial Ga-face polarity GaN (0001) wurtzite crystal film grown on sapphire. The native GaN crystal is used for the development of an ion blocked sensor. The potential is based on the Volta potential, generated at the semiconductor/solution interface and within the Helmholtz layer, due to specifically adsorbed anions. The selectivity of the sensor is based on the direct interaction of the anionic ligand with the outer electron-defective gallium atoms; thus, it is not dependent on the lipophilicity of the adsorbed charged species. The chemical resistivity of the GaN crystal provides sensors with excellent lifetime, signal stability, and reproducibility.

引用

页码：5552 / 5556

页数：5

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