Low-threshold GaInP/AlGaInP ridge waveguide lasers

被引：12

作者：

Kuhn, J ^{[1
]}

Geng, C ^{[1
]}

Scholz, F ^{[1
]}

Schweizer, H ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 20期

关键词：

semiconductor junction lasers; ridge waveguides;

D O I：

10.1049/el:19971165

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have fabricated low-threshold 670nm GaInP/AlGaInP ridge waveguide lasers based on a combined dry-and wet-etching technique. Minimum CW threshold currents of 10.4mA with a differential quantum efficiency of 72% have been obtained for a 2 mu m wide and 200 mu m long triple quantum well laser. A maximum output power of 23mW per facet is achieved for this uncoated device. Single transverse mode operation is observed for output powers of up to 14mW per facet.

引用

页码：1707 / 1708

页数：2

共 5 条

[1] HIGH-TEMPERATURE (GREATER-THAN-150-DEGREES-C) AND LOW THRESHOLD CURRENT OPERATION OF ALGAINP/GAXIN1-XP STRAINED MULTIPLE QUANTUM-WELL VISIBLE LASER-DIODES [J].

KATSUYAMA, T ;

YOSHIDA, I ;

SHINKAI, J ;

HASHIMOTO, J ;

HAYASHI, H .

APPLIED PHYSICS LETTERS, 1991, 59 (26) :3351-3353

[2]

MORTENSEN P, 1995, LASER FOCUS WORL OCT, P34

[3] GAINP-(ALYGA1-Y)INP 670 NM QUANTUM-WELL LASERS FOR HIGH-TEMPERATURE OPERATION [J].

SMOWTON, PM ;

BLOOD, P .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, 31 (12) :2159-2164

[4] High performance 660nm InGaP/AlGaInP quantum well metal cladding ridge waveguide laser diode [J].

Sun, D ;

Treat, DW ;

Bour, DP .

ELECTRONICS LETTERS, 1996, 32 (16) :1488-1490

[5] JUNCTION-SIDE UP OPERATION OF (AL)GAINP LASERS WITH VERY LOW THRESHOLD CURRENTS [J].

UNGER, P ;

ROENTGEN, P ;

BONA, GL .

ELECTRONICS LETTERS, 1992, 28 (16) :1531-1532

← 1 →