The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-passivated Ge pMOSFETs

被引：15

作者：

Caymax, Matty ^{[1
]}

Leys, Frederik ^{[1
]}

Mitard, Jerome ^{[1
]}

Martens, Koen ^{[1
]}

Yang, Lijun ^{[2
]}

Pourtois, Geoffrey ^{[1
]}

Vandervorst, Wilfried ^{[3
]}

Meuris, Marc ^{[1
]}

Loo, Roger ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Quantum Chem & Phys Chem, Leuven, Belgium

[3] Katholieke Univ Leuven, Inst Voor Kern Stralingsfysica, B-3001 Leuven, Belgium

来源：

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT | 2009年 / 19卷 / 01期

关键词：

SURFACE SEGREGATION; N-FETS; P-FETS; INTERFACE; GERMANIUM; TEMPERATURE; GE(100); IMPACT; FILMS; GAS;

D O I：

10.1149/1.3118944

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Recently, best 65 nm Ge pMOSFET performance has been reported (13) with a standard Si CMOS HfO2 gate stack module. The Ge passivation is based on a thin, fully strained epitaxial Si-layer grown on the Ge surface. We investigated in more detail how device performance (hole mobility, I-ON, V-t etc) depends on the characteristics of this Si layer. We found that surface segregation of Ge through the Si layer takes place during the growth, which turns out to be determining for the interfacial trap density and distribution in the finalized gate stack. Based on a better understanding of the fundamentals of the Si deposition process, we optimized the process by switching to another Si precursor and lowering the deposition temperature. This resulted in a 4 times lower D-it and in improved device performance.

引用

页码：183 / +

页数：3

共 33 条

[21] EMPIRICAL INTERATOMIC POTENTIAL FOR SI-H INTERACTIONS [J].