Pulsed laser deposition of epitaxial titanium nitride on MgO(001) monitored by RHEED oscillation

被引：40

作者：

Inumaru, K ^{[1
]}

Ohara, T ^{[1
]}

Yamanaka, S ^{[1
]}

机构：

[1] Hiroshima Univ, Fac Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

来源：

APPLIED SURFACE SCIENCE | 2000年 / 158卷 / 3-4期

关键词：

titanium nitride; epitaxy; RHEED oscillation; pulsed laser deposition;

D O I：

10.1016/S0169-4332(00)00038-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Titanium nitride was grown epitaxially on MgO(001) by a pulsed laser deposition (PLD) method, and the oscillations of reflection high energy electron diffraction (RHEED) for this system were observed for the first time. The RHEED patterns and atomic force microscope (AFM) analysis revealed the two-dimensional growth of highly flat TiN films. The high-resolution reciprocal space mapping of X-ray diffraction of the TiN film showed that the lattice dimensions of the TST shrunk along the plane parallel to the surface of the MgO(001) substrate by 0.6% with no structural relaxation and no mosaic disorder, demonstrating the deposition of the high-quality epitaxial film. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：375 / 377

页数：3

共 15 条

[1] ELECTRONIC-PROPERTIES OF EPITAXIAL TIN VN(001) SUPERLATTICES [J].

HIRASHITA, N ;

GREENE, JE ;

HELMERSSON, U ;

BIRCH, J ;

SUNDGREN, JE .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) :4963-4968

[2] GROWTH AND PROPERTIES OF SINGLE-CRYSTAL TIN FILMS DEPOSITED BY REACTIVE MAGNETRON SPUTTERING [J].

JOHANSSON, BO ;

SUNDGREN, JE ;

GREENE, JE ;

ROCKETT, A ;

BARNETT, SA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (02) :303-307

[3] ATOMIC CONTROL OF THE SRTIO3 CRYSTAL-SURFACE [J].

KAWASAKI, M ;

TAKAHASHI, K ;

MAEDA, T ;

TSUCHIYA, R ;

SHINOHARA, M ;

ISHIYAMA, O ;

YONEZAWA, T ;

YOSHIMOTO, M ;

KOINUMA, H .

SCIENCE, 1994, 266 (5190) :1540-1542

[4] Laser ablation synthesis and characterization of nitride coatings [J].

Kumar, A ;

Chan, HL ;

Ekanayake, U ;

Wierzbicki, A ;

Dahotre, NB .

JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE, 1997, 6 (05) :577-582

[5] EPITAXIAL-GROWTH OF HIGHLY CRYSTALLINE AND CONDUCTIVE NITRIDE FILMS BY PULSED-LASER DEPOSITION [J].

LEE, MB ;

KAWASAKI, M ;

YOSHIMOTO, M ;

KUMAGAI, M ;

KOINUMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (11) :6308-6311

[6] Nonlinear flux flow in TiN superconducting thin film [J].

Lefloch, F ;

Hoffmann, C ;

Demolliens, O .

PHYSICA C, 1999, 319 (3-4) :258-266

[7] HIGH-QUALITY GAN GROWN AT HIGH GROWTH-RATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

LI, LK ;

YANG, Z ;

WANG, WI .

ELECTRONICS LETTERS, 1995, 31 (24) :2127-2128

[8] FABRICATION OF NBN/AIN SUPERCONDUCTING MULTILAYERS [J].

MURDUCK, JM ;

VICENT, J ;

SCHULLER, IK ;

KETTERSON, JB .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) :4216-4219

[9] Reflection high-energy electron diffraction and atomic force microscopy studies on homoepitaxial growth of SrTiO3(001) [J].

Naito, M ;

Yamamoto, H ;

Sato, H .

PHYSICA C, 1998, 305 (3-4) :233-250

[10] SUPERCONDUCTING INTERLAYER COUPLING OF NBN/X (X=AG, CNX) MULTILAYERED FILMS [J].

NAKANISHI, M ;

TSUCHIYA, Y ;

NAKAYAMA, N ;

YOSHIMURA, K ;

KOSUGE, K ;

NAGATA, S ;

YAMAGUCHI, S .

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 1995, 253 (1-2) :33-38

← 1 2 →