共 12 条
[1]
AMANO H, 1988, THIN SOLID FILMS, V163, P425
[2]
Ultraviolet InGaN and GaN single-quantum-well-structure light-emitting diodes grown on epitaxially laterally overgrown GaN substrates
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,
1999, 38 (10)
:5735-5739
[3]
MUKAI T, 1998, JPN J APPL PHYS, V37, P1358
[6]
HIGH-POWER GAN P-N-JUNCTION BLUE-LIGHT-EMITTING DIODES
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1991, 30 (12A)
:L1998-L2001
[7]
GAN GROWTH USING GAN BUFFER LAYER
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1991, 30 (10A)
:L1705-L1707
[8]
NAKAMURA S, 1996, JPN J APPL PHYS PT 1, V35, P74
[9]
Properties of full-color fluorescent display devices excited by a UV light-emitting diode
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1998, 37 (2A)
:L129-L131
[10]
Full-color fluorescent display devices using a Near-UV light-emitting diode
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1996, 35 (7A)
:L838-L839