Electron emission from gated silicide field emitter arrays

被引：10

作者：

Takai, M ^{[1
]}

Iriguchi, T

Morimoto, H

Hosono, A

Kawabuchi, S

机构：

[1] Osaka Univ, Res Ctr Mat Sci Extreme Condit, Osaka 5608531, Japan

[2] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

[3] Mitsubishi Elect Co, Adv Technol R&D Ctr, Amagasaki, Hyogo 661, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期

关键词：

D O I：

10.1116/1.589906

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicidation of the top surface of Si tips with a Nb gate structure has been carried out to improve the emission behavior of Si field emitter arrays (FEAs). A Pt layer with a thickness of 5-10 nm was deposited through the gate opening and annealed at 850 degrees C. The electron emission was enhanced by a factor of 10 and the average emission per tip was 3.5 mu A for a 10X 10 FEA. Fowler-Nordheim plots indicated the decrease in work function after silicidation. (C) 1998 American Vacuum Society. [S0734-211X(98)01702-8].

引用

页码：790 / 792

页数：3

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