Effect of oxygen pressure upon composition variation during chemical vapor deposition growth of lead titanate films from tetraethyl lead and titanium tetraisopropoxide

被引:8
作者
Hong, LS [1 ]
Wei, CC [1 ]
机构
[1] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei 106, Taiwan
关键词
MOCVD; PbTiO3; Pb(C2H5)(4); Ti(i-OC3H7)(4); oxygen; Pb deficiency;
D O I
10.1016/S0167-577X(00)00159-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Lead titanate (PbTiO3) films have been prepared from mixtures of tetraethyl lead (Pb(C2H5)(4)), titanium tetrasiopropoxide (Ti(i-OC3W7)(4)) and oxygen (O-2) by a low-pressure chemical vapor deposition (LPCVD) reactor. The effects of O-2 to the film growth including growth rate, crystalline property, and composition are investigated. Without adding O-2, the film formed at 823 K shows only TiO2 XRD diffraction pattern, whereas stoichiometric PbTiO3 is formed after adding 1 vol.% of O-2. Based on RBS composition analyses, increasing surplus O-2 concentration not only decreases the amount ratio of Pb but also causes concentration profile of Pb in the films. The deviation of Pb composition is reduced by raising the substrate temperature up to 873 K. A thermodynamic calculation of the stability domain of the Pb-O system suggests that the formation of high valence lead oxides having high volatility during film deposition is responsible for the Pb-deficient phenomenon in this CVD process. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:149 / 153
页数:5
相关论文
共 11 条
[1]   COMPOSITION-CONTROLLED GROWTH OF PBTIO3 ON SRTIO3 BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].
DORMANS, GJM ;
VANVELDHOVEN, PJ ;
DEKEIJSER, M .
JOURNAL OF CRYSTAL GROWTH, 1992, 123 (3-4) :537-544
[2]   OXIDE FERROELECTRIC MATERIALS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
ERBIL, A ;
BRAUN, W ;
KWAK, BS ;
WILKENS, BJ ;
BOATNER, LA ;
BUDAI, JD .
JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :684-689
[3]   PBO VAPOUR PRESSURE IN PB(TI1-X ZRX)O3 SYSTEM [J].
HARDTL, KH ;
RAU, H .
SOLID STATE COMMUNICATIONS, 1969, 7 (01) :41-&
[4]  
KAKIMI K, 1995, JPN J APPL PHYS, V34, P5139
[5]   FERROELECTRIC MEMORIES [J].
LARSEN, PK ;
CUPPENS, R ;
SPIERINGS, GACM .
FERROELECTRICS, 1992, 128 (1-4) :265-292
[6]   CHARACTERISTIC CHANGE DUE TO ARGON ION ETCHING AND HEAT-TREATMENT OF (PB,LA)TIO3 THIN-FILMS FABRICATED BY MULTIPLE CATHODE SPUTTERING [J].
MAIWA, H ;
ICHINOSE, N ;
OKAZAKI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5136-5140
[7]   PREPARATION OF C-AXIS-ORIENTED PBTIO3 THIN-FILMS BY MOCVD UNDER REDUCED PRESSURE [J].
OKADA, M ;
TAKAI, S ;
AMEMIYA, M ;
TOMINAGA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (06) :1030-1034
[8]   METALORGANIC CHEMICAL VAPOR-DEPOSITION OF C-AXIS ORIENTED PZT THIN-FILMS [J].
OKADA, M ;
TOMINAGA, K ;
ARAKI, T ;
KATAYAMA, S ;
SAKASHITA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (04) :718-722
[9]   FERROELECTRIC PBZR0.2TI0.8O3 THIN-FILMS ON EPITAXIAL Y-BA-CU-O [J].
RAMESH, R ;
INAM, A ;
CHAN, WK ;
TILLEROT, F ;
WILKENS, B ;
CHANG, CC ;
SANDS, T ;
TARASCON, JM ;
KERAMIDAS, VG .
APPLIED PHYSICS LETTERS, 1991, 59 (27) :3542-3544
[10]   PREPARATION AND ELECTRICAL-PROPERTIES OF FERROELECTRIC (PB,LA)(ZR,TI)O-3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].
TOMINAGA, K ;
SAKASHITA, Y ;
NAKASHIMA, H ;
OKADA, M .
JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) :219-225