Modeling the contribution of quantum confinement to luminescence from silicon nanoclusters

被引:191
作者
Trwoga, PF [1 ]
Kenyon, AJ [1 ]
Pitt, CW [1 ]
机构
[1] Univ London Univ Coll, Dept Elect & Elect Engn, London WC1E 7JE, England
关键词
D O I
10.1063/1.366608
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a model for the luminescence spectrum of silicon nanoclusters. We propose that the major contribution to luminescence is from radiative recombination of confined excitons (quantum confinement). Utilizing the effective mass approximation we consider the variation in oscillator strength with cluster size and the associated change in the number of available free carriers. By varying both the mean cluster size and size distribution of silicon nanoclusters, the luminescence spectra are modeled to a good fit. We compare our model with experimental photoluminescence and electroluminescence data from this group and from others. (C) 1998 American Institute of Physics. [S0021-8979(98)00307-7].
引用
收藏
页码:3789 / 3794
页数:6
相关论文
共 25 条
[1]   VISIBLE-LIGHT EMISSION FROM THIN-FILMS CONTAINING SI, O, N, AND H [J].
AUGUSTINE, BH ;
IRENE, EA ;
HE, YJ ;
PRICE, KJ ;
MCNEIL, LE ;
CHRISTENSEN, KN ;
MAHER, DM .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) :4020-4030
[2]   ON THE DEVELOPMENT OF BULK OPTICAL-PROPERTIES IN SMALL SEMICONDUCTOR CRYSTALLITES [J].
BRUS, LE .
JOURNAL OF LUMINESCENCE, 1984, 31-2 (DEC) :381-384
[3]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[4]   LUMINESCENT BANDS AND THEIR PROPOSED ORIGINS IN HIGHLY POROUS SILICON [J].
CANHAM, LT .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1995, 190 (01) :9-14
[5]   The effect of size distributions of Si nanoclusters on photoluminescence from ensembles of Si nanoclusters [J].
Chen, XS ;
Zhao, JJ ;
Wang, GH ;
Shen, XC .
PHYSICS LETTERS A, 1996, 212 (05) :285-289
[6]   Porous silicon: From luminescence to LEDs [J].
Collins, RT ;
Fauchet, PM ;
Tischler, MA .
PHYSICS TODAY, 1997, 50 (01) :24-31
[7]  
EFROS AL, 1982, SOV PHYS SEMICOND+, V16, P772
[8]   CONFINEMENT OF EXCITONS IN QUANTUM DOTS [J].
EINEVOLL, GT .
PHYSICAL REVIEW B, 1992, 45 (07) :3410-3417
[9]  
EKIMOV AI, 1981, JETP LETT+, V34, P345
[10]   Effect of different preparation conditions on light emission from silicon implanted SiO2 layers [J].
Ghislotti, G ;
Nielsen, B ;
AsokaKumar, P ;
Lynn, KG ;
Gambhir, A ;
DiMauro, LF ;
Bottani, CE .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) :8660-8663