Orientation controlling of PZT thin films derived from sol-gel techniques

被引：18

作者：

Cheng, JR

Meng, ZY ^{[1
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Technol, Shanghai 201800, Peoples R China

[2] Shanghai Jiao Tong Univ, Sch Mat Sci, Shanghai 200030, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2000年 / 19卷 / 21期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1023/A:1006784021920

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The factors that influence the crystal orientation of lead zirconate titanate (PZT) thin films fabricated by using sol-gel techniques on (111) preferred oriented Pt/Ti/SiO2/Si(100) substrates were investigated. It was found that the electrical properties of ferroelectric thin films were strongly dependent on their crystallographic orientation. The scanning electron microscopy images of the microstructures of PZT films were presented.

引用

页码：1945 / 1949

页数：5

共 14 条

[1] SPUTTER-DEPOSITION OF [111]-AXIS ORIENTED RHOMBOHEDRAL PZT FILMS AND THEIR DIELECTRIC, FERROELECTRIC AND PYROELECTRIC PROPERTIES [J].