Effects of Se doping on thermoelectric properties of Zn4Sb3 at low-temperatures

被引：17

作者：

Pan, L. ^{[1
]}

Qin, X. Y. ^{[1
]}

Liu, M. ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China

来源：

SOLID STATE SCIENCES | 2010年 / 12卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Semiconductors; Thermoelectric; Hot-pressing; ALPHA-ZN4SB3; BETA-ZN4SB3;

D O I：

10.1016/j.solidstatesciences.2009.11.003

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The thermoelectric properties of Se-doped compounds Zn-4(Sb1-xSex)(3) (x = 0, 0.005, 0.01, 0.015) have been studied. The results indicate that low-temperature (T < 300 K) thermal conductivity of moderately doped Zn-4(Sb0.99Se0.01)(3) reduce remarkably as compared with that of Zn4Sb3 due to enhanced impurity (dopant) scattering of phonons. Electrical resistivity and Seebeck coefficient are found to increase and then decrease moderately with the increase in the Se content. Moreover, the lightly doped compound Zn-4(Sb0.99Se0.01)(3) exhibits the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, is about 1.3 times larger than that of pure Zn4Sb3 at 300 K. (C) 2009 Elsevier Masson SAS. All rights reserved.

引用

页码：257 / 261

页数：5

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