Injection charge assisted polarization reversal in ferroelectric thin films

被引：53

作者：

Kim, Yunseok ^{[1
]}

Buehlmann, Simon

Hong, Seungbum

Kim, Seung-Hyun

No, Kwangsoo

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] Samsung Adv Inst Technol, Semicond Device & Mat Lab, Yongin 446712, South Korea

[3] Inostek Inc, Ansan 425791, South Korea

[4] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 07期

关键词：

Data storage equipment - Electric charge - Polarization - Probes - Pulsed laser deposition - Semiconducting lead compounds;

D O I：

10.1063/1.2679902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have investigated the polarization reversal on ferroelectric thin films caused by a grounded tip on 50-nm-thick Pb(Zr,Ti)O-3 films. Backswitching occurred when the grounded tip recontacted a "freshly" switched area. It is believed that the upper part of the film switches back due to the field between the grounded tip and previously injected charges. During dynamic operation, partial backswitching was observed during pulsed writing using pulse widths of 1 ms. The results show that polarization reversal is an issue, which has to be addressed in the writing scheme of future probe-based storage devices. (c) 2007 American Institute of Physics.

引用

页数：3

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