Inorganic semiconductors for flexible electronics

被引:768
作者
Sun, Yugang
Rogers, John A.
机构
[1] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
[2] Univ Illinois, Dept Mat Sci & Engn, Beckman Inst, Urbana, IL 61801 USA
[3] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
关键词
D O I
10.1002/adma.200602223
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This article reviews several classes of inorganic semiconductor materials that can be used to form high-performance, thin-film transistors (TFTs) for large area, flexible electronics. Examples ranging from thin films of various forms of silicon to nanoparticles and nanowires of compound semiconductors are presented, with an emphasis on methods of depositing and integrating thin films of these materials into devices. Performance characteristics, including both electrical and mechanical behavior, for isolated transistors as well as circuits with various levels of complexity are reviewed. Collectively, the results suggest that flexible or printable inorganic materials may be attractive for a range of applications not only in flexible but also in large-area electronics, from existing devices such as flat-panel displays to more challenging (in terms of both cost and performance requirements) systems such as large area radio-frequency communication devices, structural health monitors, and conformal X-ray imagers.
引用
收藏
页码:1897 / 1916
页数:20
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