Bandgap narrowing and ethanol sensing properties of In-doped ZnO nanowires

被引：56

作者：

Li, L. M. ^{[1
]}

Li, C. C. ^{[1
]}

Zhang, J. ^{[1
]}

Du, Z. F. ^{[1
]}

Zou, B. S. ^{[1
]}

Yu, H. C. ^{[1
]}

Wang, Y. G. ^{[1
]}

Wang, T. H. ^{[1
]}

机构：

[1] Hunan Univ, Micronano Technol Res Ctr, Changsha 410082, Peoples R China

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 22期

关键词：

D O I：

10.1088/0957-4484/18/22/225504

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Indium doping effects on the optical and electrical properties of ZnO nanowires are investigated. The abnormal Raman spectrum shows only a peak centred at 439 cm(-1) related to high E-2 mode, which is due to In doping. The acceptor binding energy is estimated to be 93 meV from the results of temperature-dependent photoluminescence spectra. The redshift of the bandgap edge is attributed to a merging of donor and conduction bands. The sensitivity of the sensors fabricated from In-doped ZnO nanowires is about 3 - 1 ppm ethanol, and increases nearly linearly up to 27 as the ethanol concentration is raised to 100 ppm. Our results indicate that the In-doped ZnO nanowires have potential applications in fabricating optoelectrical devices and gas sensors.

引用

页数：4

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