Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy

被引：59

作者：

Frazier, RM ^{[1
]}

Thaler, GT ^{[1
]}

Leifer, JY ^{[1
]}

Hite, JK ^{[1
]}

Gila, BP ^{[1
]}

Abernathy, CR ^{[1
]}

Pearton, SJ ^{[1
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1857074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlCrN layers were grown by gas source molecular beam epitaxy with varying amounts of Cr (up to similar to3 at. %) under a broad range of Cr cell temperatures and V/III ratio. Magnetic measurements performed in a superconducting quantum interference device magnetometer showed evidence of ferromagnetism up to 350 K in single phase material. Magnetization dependence on dopant cell temperature and V/III was used to optimize the growth conditions of the AlCrN layers. The single-phase material was highly insulating (similar to10(10) Omega cm), while the material containing second phases (predominantly Cr2N and AlxCry) was conducting with resistivity of order 1000 Omega cm. High resolution x-ray diffraction. rocking curves indicated high crystalline quality in the single phase material. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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