Determination of ohmic contacts to n-type 6H- and polycrystalline 3C-SiC using circular transmission line structures

被引：7

作者：

Kriz, J ^{[1
]}

Gottfried, K ^{[1
]}

Kaufmann, C ^{[1
]}

Gessner, T ^{[1
]}

机构：

[1] Tech Univ Chemnitz, Ctr Microtechnol, D-09107 Chemnitz, Germany

来源：

关键词：

ohmic contacts; circular transmission line method; W; TiW; WSi2;

D O I：

10.1016/S0925-9635(97)00191-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ohmic contacts to n-type 3C- and 6H-SiC were investigated using the circular transmission line method (CTLM). For the contact metallization titanium-tungsten, tungsten and tungsten disilicide were used. The determination of the specific contact resistance using two different test structures of CTLMs was tried, but it was shown that the end contact measurements as they were proposed in the more sophisticated model by Reeves were too high and the equations were not solvable within the conditions of the present study. The specific contact resistance was calculated by the method of Marlow and Das. Annealing the contacts resulted for TIW contacts in a rho(C) = 3.7 x 10(-4) Omega cm(-2) to 6H-SiC (7.1 x 10(-5) Omega cm(-2) to 3C-SiC) and for WSi2 contacts in a rho(C) = 2.1 x 10(-5) Omega cm(-2) to 6H-SiC (2..20 x 10(-5) Omega cm(-2) to 3C-SiC). (C) 1998 Elsevier Science S.A.

引用

页码：77 / 80

页数：4

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