The role of Auger recombination in the temperature-dependent output characteristics (T0 = ∞) of p-doped 1.3 μm quantum dot lasers

被引：224

作者：

Fathpour, S ^{[1
]}

Mi, Z ^{[1
]}

Bhattacharya, P ^{[1
]}

Kovsh, AR ^{[1
]}

Mikhrin, SS ^{[1
]}

Krestnikov, IL ^{[1
]}

Kozhukhov, AV ^{[1
]}

Ledentsov, NN ^{[1
]}

机构：

[1] NL Nanosemicond GmbH, D-44227 Dortmund, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 22期

关键词：

D O I：

10.1063/1.1829158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature invariant output slope efficiency and threshold current (T-0=infinity) in the temperature range of 5-75degreesC have been measured for 1.3 mum p-doped self-organized quantum dot lasers. Similar undoped quantum dot lasers exhibit T-0=69 K in the same temperature range. A self-consistent model has been employed to calculate the various radiative and nonradiative current components in p-doped and undoped lasers and to analyze the measured data. It is observed that Auger recombination in the dots plays an important role in determining the threshold current of the p-doped lasers. (C) 2004 American Institute of Physics.

引用

收藏

页码：5164 / 5166

页数：3

相关论文

共 18 条

[1] Temperature dependence of the threshold current density of a quantum dot laser [J].

Asryan, LV ;

Suris, RA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (05) :841-850

[2] In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties [J].

Bhattacharya, P ;

Kamath, KK ;

Singh, J ;

Klotzkin, D ;

Phillips, J ;

Jiang, HT ;

Chervela, N ;

Norris, TB ;

Sosnowski, T ;

Laskar, J ;

Murty, MR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (05) :871-883

[3] Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers [J].

Bhattacharya, P ;

Ghosh, S ;

Pradhan, S ;

Singh, J ;

Wu, ZK ;

Urayama, J ;

Kim, K ;

Norris, TB .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (08) :952-962

[4] Temperature dependence of carrier relaxation in strain-induced quantum dots [J].

Braskén, M ;

Lindberg, M ;

Sopanen, M ;

Lipsanen, H ;

Tulkki, J .

PHYSICAL REVIEW B, 1998, 58 (24) :15993-15996

[5] Modulation characteristics of quantum-dot lasers: The influence of P-type doping and the electronic density of states on obtaining high speed [J].

Deppe, DG ;

Huang, H ;

Shchekin, OB .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (12) :1587-1593

[6] Carrier distribution, gain, and lasing in 1.3-μm InAs-InGaAs quantum-dot lasers [J].

Dikshit, AA ;

Pikal, JM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2004, 40 (02) :105-112

[7]

FATHPOUR S, 2004, 62 DEV RES C DIG IEE, P156

[8] Temperature-dependent measurement of Auger recombination in self-organized In0.4Ga0.6As/GaAs quantum dots [J].

Ghosh, S ;

Bhattacharya, P ;

Stoner, E ;

Singh, J ;

Jiang, H ;

Nuttinck, S ;

Laskar, J .

APPLIED PHYSICS LETTERS, 2001, 79 (06) :722-724

[9] Theory of random population for quantum dots [J].

Grundmann, M ;

Bimberg, D .

PHYSICAL REVIEW B, 1997, 55 (15) :9740-9745

[10] Intersubband gain and stimulated emission in long-wavelength (λ=13 μm) intersubband In(Ga)As-GaAs quantum-dot electroluminescent devices [J].

Krishna, S ;

Bhattacharya, P ;

Singh, J ;

Norris, T ;

Urayama, J ;

McCann, PJ ;

Namjou, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (08) :1066-1074