Intersubband gain and stimulated emission in long-wavelength (λ=13 μm) intersubband In(Ga)As-GaAs quantum-dot electroluminescent devices

被引：24

作者：

Krishna, S ^{[1
]}

Bhattacharya, P

Singh, J

Norris, T

Urayama, J

McCann, PJ

Namjou, K

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[2] Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2001年 / 37卷 / 08期

基金：

美国国家科学基金会;

关键词：

far-infrared emission; intersubband devices; quantum dots;

D O I：

10.1109/3.937396

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dynamics of injected carriers and the conditions for intersubband gain and population inversion in ln(Ga)As-GaAs self-organized quantum dots have been studied. Direct femtosecond pump-probe spectroscopy as a function of temperature and excitation density confirms earlier results and shows a long (> 100 ps) electron relaxation time between the excited states and ground state in the dots. Intersubband gains as high as 170 cm(-1) are calculated in the dots. Far-infrared spontaneous emission centered around 13 mum is observed in edge-emitting light-emitting diodes. Stimulated emission, with a distinct threshold around 1.1 kA/cm(2) in the light-current characteristics, is observed in plasmon-enhanced waveguide devices. The intersubband threshold occurs after a threshold is observed for interband lasing (similar to1 mum) in the same device.

引用

页码：1066 / 1074

页数：9

共 41 条

[1] Buried heterostructure quantum cascade lasers with a large optical cavity waveguide [J].

Beck, M ;

Faist, J ;

Oesterle, U ;

Ilegems, M ;

Gini, E ;

Melchior, H .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (11) :1450-1452

[2] ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J].

BERGER, PR ;

CHANG, K ;

BHATTACHARYA, P ;

SINGH, J ;

BAJAJ, KK .

APPLIED PHYSICS LETTERS, 1988, 53 (08) :684-686

[3] In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties [J].

Bhattacharya, P ;

Kamath, KK ;

Singh, J ;

Klotzkin, D ;

Phillips, J ;

Jiang, HT ;

Chervela, N ;

Norris, TB ;

Sosnowski, T ;

Laskar, J ;

Murty, MR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (05) :871-883

[4] InGaAs-GaAs quantum-dot lasers [J].

Bimberg, D ;

Kirstaedter, N ;

Ledentsov, NN ;

Alferov, ZI ;

Kopev, PS ;

Ustinov, VM .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :196-205

[5]

FAIST J, 1996, ELECTRON LETT, V32, P561

[6] Midinfrared emission from near-infrared quantum-dot lasers [J].

Grundmann, M ;

Weber, A ;

Goede, K ;

Ustinov, VM ;

Zhukov, AE ;

Ledentsov, NN ;

Kop'ev, PS ;

Alferov, ZI .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :4-6

[7] Energy relaxation by multiphonon processes in InAs/GaAs quantum dots [J].

Heitz, R ;

Veit, M ;

Ledentsov, NN ;

Hoffmann, A ;

Bimberg, D ;

Ustinov, VM ;

Kopev, PS ;

Alferov, ZI .

PHYSICAL REVIEW B, 1997, 56 (16) :10435-10445

[8] Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots [J].

Huffaker, DL ;

Deppe, DG .

APPLIED PHYSICS LETTERS, 1998, 73 (04) :520-522

[9] Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture [J].

Huffaker, DL ;

Baklenov, O ;

Graham, LA ;

Streetman, BG ;

Deppe, DG .

APPLIED PHYSICS LETTERS, 1997, 70 (18) :2356-2358

[10] Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study [J].

Jiang, HT ;

Singh, J .

PHYSICAL REVIEW B, 1997, 56 (08) :4696-4701

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