Single-event upset in flash memories

被引:78
作者
Schwartz, HR [1 ]
Nichols, DK [1 ]
Johnston, AH [1 ]
机构
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91125 USA
关键词
D O I
10.1109/23.659053
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single-event upset was investigated in high-density flash memories from two different manufacturers. Many types of functional abnormalities can be introduced in these devices by heavy-ions because of their complex internal architecture. Changes in the stored memory contents sometimes occurred, even when devices were irradiated in a read mode with the internal charge pump inactive. For one device technology, unusually high currents were observed during post-irradiation cycling that were high enough to cause catastrophic failure.
引用
收藏
页码:2315 / 2324
页数:10
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