Physically-based model of the effective mobility in heavily-doped n-MOSFET's

被引：70

作者：

Villa, S ^{[1
]}

Lacaita, AL

Perron, LM

Bez, R

机构：

[1] Politecn Milan, I-20133 Milan, Italy

[2] CNR, CEQSE, I-20133 Milan, Italy

[3] SGS Thomson Microelect, I-20041 Agrate Brianza, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 01期

关键词：

D O I：

10.1109/16.658819

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a new analytical mobility model for channel electrons in heavily-doped MOSFET's biased from weak to strong inversion suitable for implementation in device simulation codes. The model accounts for the two-dimensionality of the electron gas and for the effect of charge trapping on the measurements and has been validated by comparing the theoretical curves with an extensive set of mobility measurements performed on devices with channel doping ranging from 3.8 x 10(17) to 1.25 x 10(18) cm(-3) over a wide bias and temperature range (141-400 K).

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收藏

页码：110 / 115

页数：6

相关论文

共 20 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2] A SEMIEMPIRICAL MODEL OF THE MOSFET INVERSION LAYER MOBILITY FOR LOW-TEMPERATURE OPERATION [J].

ARORA, ND ;

GILDENBLAT, GS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) :89-93

[3] A NEW AC TECHNIQUE FOR ACCURATE DETERMINATION OF CHANNEL CHARGE AND MOBILITY IN VERY THIN GATE MOSFETS [J].

CHOW, PMD ;

WANG, KL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) :1299-1304

[4] OPTICAL AND INTERVALLEY SCATTERING IN QUANTIZED INVERSION LAYERS IN SEMICONDUCTORS [J].

FERRY, DK .

SURFACE SCIENCE, 1976, 57 (01) :218-228

[5] MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS [J].

FISCHETTI, MV ;

LAUX, SE .

PHYSICAL REVIEW B, 1993, 48 (04) :2244-2274

[6] A COMPARISON OF MODELS FOR PHONON-SCATTERING IN SILICON INVERSION-LAYERS [J].

GAMIZ, F ;

LOPEZVILLANUEVA, JA .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (08) :4128-4129

[7] SURFACE-ROUGHNESS AT THE SI(100)-SIO2 INTERFACE [J].

GOODNICK, SM ;

FERRY, DK ;

WILMSEN, CW ;

LILIENTAL, Z ;

FATHY, D ;

KRIVANEK, OL .

PHYSICAL REVIEW B, 1985, 32 (12) :8171-8186

[8] MONTE-CARLO MODELING OF ELECTRON-TRANSPORT IN A SI METAL-OXIDE-SEMICONDUCTOR INVERSION LAYER INCLUDING QUANTUM STATE AND BULK SCATTERING [J].

IMANAGA, S ;

HAYAFUJI, Y .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) :1522-1530

[9] 2-DIMENSIONAL LATTICE SCATTERING MOBILITY IN A SEMICONDUCTOR INVERSION LAYER [J].

KAWAJI, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (04) :906-&

[10] INVESTIGATION OF MOST CHANNEL CONDUCTANCE IN WEAK INVERSION [J].

KOOMEN, J .

SOLID-STATE ELECTRONICS, 1973, 16 (07) :801-810