Intrinsic limit of electrical properties of transparent conductive oxide films

被引:101
作者
Chen, M [1 ]
Pei, ZL
Wang, X
Yu, YH
Liu, XH
Sun, C
Wen, LS
机构
[1] Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Inst Met Res, Shenyang 110015, Peoples R China
关键词
D O I
10.1088/0022-3727/33/20/304
中图分类号
O59 [应用物理学];
学科分类号
摘要
Contributions of acoustical deformation scattering, ion impurity scattering and grain boundary potential scattering to the conductivity of TCO films have been calculated in order to deduce the intrinsic limit of conductivity of TCO films regardless of precise details of the preparation procedure. The results indicate that the effective mass of charge carriers has a strong dependence on carrier concentration. Based on the effective mass correction, as well as the carrier concentration ionized impurity centre correction, scattering due to ion impurity has been developed to explain the upper limit of mobility or the lower limit of resistivity of TCO films. Two empirical expressions are introduced to depict the dependence of the upper limit of mobility and the lower limit of resistivity of TCO films on carrier concentration. The dependence of transparency on carrier concentration is also discussed.
引用
收藏
页码:2538 / 2548
页数:11
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