1.54 μm emission dynamics of erbium-doped zinc-oxide thin films

被引：93

作者：

Komuro, S ^{[1
]}

Katsumata, T

Morikawa, T

Zhao, X

Isshiki, H

Aoyagi, Y

机构：

[1] Toyo Univ, Fac Engn, Kawagoe, Saitama 3508585, Japan

[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 26期

关键词：

D O I：

10.1063/1.126826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Erbium-related 1.54 mu m emission dynamics of Er-doped ZnO thin films has been investigated for the different excitation conditions. The excitation was achieved either by exciting indirectly Er3+ ions due to an electron-hole-mediated process or exciting directly discrete energy levels of Er3+ ions. There is no change in the 1.54 mu m emission spectrum feature in spite of the different excitation conditions, whereas dramatic change can be seen in the rise time of 1.54 mu m emission. The shorter rise time of 1.54 mu m emission observed for indirect excitation implies an excitation efficiency superior to direct excitation of Er3+ ions. (C) 2000 American Institute of Physics. [S0003-6951(00)03226-5].

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页码：3935 / 3937

页数：3

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