Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN

被引：16

作者：

Lin, YJ ^{[1
]}

Li, ZD

Hsu, CW

Chien, FT

Lee, CT

Shao, ST

Chang, HC

机构：

[1] Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan

[2] Natl Cent Univ, Inst Opt Sci, Chungli 32054, Taiwan

[3] Feng Chia Univ, Dept Automat Control Engn, Taichung, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 17期

关键词：

D O I：

10.1063/1.1569991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism of ohmic contact degradation for the oxidized Au/Ni/Mg-doped GaN under various annealing times has been investigated. According to the results from x-ray photoelectron spectroscopy and the Cserveny's concept, we found that an increase of hole concentration of NiOx would lead to the increasing barrier height and the increasing specific contact resistance (rho(c)) of oxidized Au/Ni/Mg-doped GaN. This suggests that the NiOx plays an important role in increasing (or reducing) the rho(c) of oxidized Au/Ni/Mg-doped GaN. (C) 2003 American Institute of Physics.

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页码：2817 / 2819

页数：3

相关论文

共 10 条

[1] Oxidized Ni/Pt and Ni/Au ohmic contacts to p-type GaN [J].

Chen, LC ;

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Shih, KK ;

Chen, FR ;

Kai, JJ ;

Chang, L .

APPLIED PHYSICS LETTERS, 2000, 76 (25) :3703-3705

[2]

CSERVENY SI, 1986, INT J ELECTRON, V25, P65

[3] Low-resistance ohmic contacts to p-type GaN [J].

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Huang, CN ;

Chen, CY ;

Shih, KK .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1275-1277

[4] Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films [J].

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Huang, CN ;

Shih, KK ;

Chen, LC ;

Chen, FR ;

Kai, JJ .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4491-4497

[5] Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN [J].

Huh, C ;

Kim, SW ;

Kim, HM ;

Kim, DJ ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2001, 78 (13) :1942-1944

[6] Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN [J].

Jang, JS ;

Seong, TY .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) :3064-3066

[7] Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes [J].

Kim, H ;

Kim, DJ ;

Park, SJ ;

Hwang, H .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) :1506-1508

[8] DIELECTRIC PROPERTIES OF COBALT OXIDE NICKEL OXIDE AND THEIR MIXED CRYSTALS [J].

RAO, KV ;

SMAKULA, A .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) :2031-&

[9] Semiconductor ultraviolet detectors [J].

Razeghi, M ;

Rogalski, A .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7433-7473

[10] Environmental and thermal aging of Au/Ni/p-GaN ohmic contacts annealed in air [J].

Wang, SH ;

Mohney, SE ;

Birkhahn, R .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (06) :3711-3716