High-performance transparent conducting oxide nanowires

被引：174

作者：

Wan, Qing

Dattoli, Eric N.

Fung, Wayne Y.

Guo, Wei

Chen, Yanbin

Pan, Xiaoqing

Lu, Wei ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

NANO LETTERS | 2006年 / 6卷 / 12期

关键词：

D O I：

10.1021/nl062213d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the growth and characterization of single-crystalline Sn-doped In2O3 (ITO) and Mo-doped In2O3 (IMO) nanowires. Epitaxial growth of vertically aligned ITO nanowire arrays was achieved on ITO/yttria-stabilized zirconia (YSZ) substrates. Optical transmittance and electrical transport measurements show that these nanowires are high-performance transparent metallic conductors with transmittance of similar to 85% in the visible range, resistivities as low as 6.29 x 10(-5) Omega(.)cm and failure-current densities as high as 3.1 x 10(7) A/cm(2). Such nanowires will be suitable in a wide range of applications including organic light-emitting devices, solar cells, and field emitters. In addition, we demonstrate the growth of branched nanowire structures in which semiconducting In2O3 nanowire arrays with variable densities were grown epitaxially on metallic ITO nanowire backbones.

引用

页码：2909 / 2915

页数：7

共 32 条

[1]

ASHCROFT NW, 2006, SOLID STATE PHYS

[2] TaSi2 nanowires:: A potential field emitter and interconnect [J].