A physical interpretation for the single-event-gate-rupture cross-section of N-channel power MOSFETs

被引：16

作者：

Johnson, GH

Galloway, KF

Schrimpf, RD

Titus, JL

Wheatley, CF

Allenspach, M

Dachs, C

机构：

[1] USN,CTR SURFACE WARFARE,CRANE,IN 47522

[2] UNIV MONTPELLIER 2,MONTPELLIER,FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 06期

关键词：

D O I：

10.1109/23.556888

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The single-event-gate-rupture cross-section is measured as a function of drain-source and gate-source bias for some n-channel power MOSFETs. The experimental techniques are explained, and the results are interpreted with the help of two-dimensional computer modeling.

引用

收藏

页码：2932 / 2937

页数：6

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