EVIDENCE OF THE IONS IMPACT POSITION EFFECT ON SEB IN N-CHANNEL POWER MOSFETS

被引：44

作者：

DACHS, C ^{[1
]}

ROUBAUD, F ^{[1
]}

PALAU, JM ^{[1
]}

BRUGUIER, G ^{[1
]}

GASIOT, J ^{[1
]}

TASTET, P ^{[1
]}

机构：

[1] CTR NATL ETUD SPATIALES,F-31055 TOULOUSE,FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期

关键词：

D O I：

10.1109/23.340558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Triggering of Single Event Burnout (SEB) in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is studied by means of experiments and simulations based on real structures. Conditions for destructive and nondestructive events are investigated through current duration observations. The effect of the ion's impact position is experimentally pointed out. Finally, further investigation with 2D MEDICI simulations [1] show that die different regions of the MOSFET cell indeed exhibit different sensitivity with respect to burnout triggering.

引用

页码：2167 / 2171

页数：5

共 9 条

[1]

ALLENSPACH M, 1994, JUL NSREC TUCS

[2] TRANSIENT HARDENED POWER FETS [J].