EXPERIMENTAL AND 2D SIMULATION STUDY OF THE SINGLE-EVENT BURNOUT IN N-CHANNEL POWER MOSFETS

被引：46

作者：

ROUBAUD, F ^{[1
]}

DACHS, C ^{[1
]}

PALAU, JM ^{[1
]}

GASIOT, J ^{[1
]}

TASTET, P ^{[1
]}

机构：

[1] CTR NATL ETUD SPATIALES,F-31055 TOULOUSE,FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/23.273458

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of the 2D simulator MEDICI as a tool for Single Event Burnout (SEB) comprehension is investigated. Simulation results are compared to experimental currents induced in an N channel power MOSFET by the ions from a Cf-252 source. Current measurements have been carried out with a specially designed circuit. Simulations allow to analyze separately the effects of the ion impact and of the electrical environment parameters on the SEB phenomenon. Burnout sensitivity is found to be increased by increasing supply voltage, ion's LET and by decreasing load charge. These electrical tendencies are validated by experiments. Burnout sensitivity is also found to be sensitive to the ion impact position. The current shapes variations for given electrical parameters can be related to LET or ion impact position changes. However, some experimental current shapes are not reproduced by simulations.

引用

页码：1952 / 1958

页数：7

共 8 条

[1] TRANSIENT HARDENED POWER FETS [J].