Chemical ordering in wurtzite InxGa1-xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy

被引：94

作者：

Ruterana, P

Nouet, G

Van der Stricht, W

Moerman, I

Considine, L

机构：

[1] ISMRA, Lab Rech & Etud Mat, CNRS, UPRESA 6004, F-14050 Caen, France

[2] State Univ Ghent, Dept Informat Technol, B-9000 Ghent, Belgium

[3] Thomas Swan & Co, Cambridge CB2 5NX, England

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 14期

关键词：

D O I：

10.1063/1.121170

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A diffraction analysis in the transmission electron microscope was carried out on InxGa1-xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy on top of thick GaN buffer layers. It is found that the ternary InxGa1-xN layers can be chemically ordered. The In and Ga atoms occupy, respectively, the two simple hexagonal sublattice sites related by the glide mirrors and helicoidal axes of the P6(3) mc symmetry group of the wurtzite GaN, The symmetry of the ordered ternary is subsequently lowered by the disappearance of these operations, and it is shown to agree with the P3ml space group. (C) 1998 American Institute of Physics. [S0003-6951(98)01714-8].

引用

页码：1742 / 1744

页数：3

共 22 条

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