Nanoscale resistive memory with intrinsic diode characteristics and long endurance

被引：114

作者：

Kim, Kuk-Hwan ^{[1
]}

Jo, Sung Hyun ^{[1
]}

Gaba, Siddharth ^{[1
]}

Lu, Wei ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 05期

基金：

美国国家科学基金会;

关键词：

crosstalk; diodes; logic arrays; nanoelectronics; random-access storage; rectifying circuits; NONVOLATILE; RESISTANCE;

D O I：

10.1063/1.3294625

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

We report studies on nanoscale resistive memory devices that exhibit diodelike I-V characteristics at on-state with reverse bias current suppressed to below 10(-13) A and rectifying ratio >10(6). The intrinsic diodelike characteristics are robust during device operation and can survive >10(8) write/erase programming cycles. The devices can be programmed at reduced programming voltages compared to earlier studies without the initial high-voltage forming process. Multibit storage capability was also reported. The intrinsic diode characteristics provide a possible solution to suppress crosstalk in high-density crossbar memory or logic arrays particularly for those based on bipolar resistive switches (memristors).

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页数：3

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