A study of the copper-pair related centers in silicon

被引：4

作者：

Istratov, AA ^{[1
]}

Heiser, T ^{[1
]}

Hieslmair, H ^{[1
]}

Flink, C ^{[1
]}

Kruger, J ^{[1
]}

Weber, ER ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Mat Sci, Berkeley, CA 94720 USA

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

copper; silicon; DLTS;

D O I：

10.4028/www.scientific.net/MSF.258-263.467

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dissociation of CuCu-related centers in p-type silicon is studied as a function of temperature just after copper contamination with subsequent quench when a significant concentration of copper remains at interstitial site, and after a long storage time. The binding energy of Cu-pair related centers is determined to be 1.02+/-0.07 eV. Some conclusions on the mechanism of copper precipitation are made. It is suggested that the potential barrier for copper precipitation of 0.55 eV is due to the coulombic repulsion between the interstitial copper atoms and the positively charged copper precipitates.

引用

页码：467 / 472

页数：6

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