MORPHOLOGICAL STABILITY ANALYSIS IN CHEMICAL VAPOR-DEPOSITION PROCESSES .1.

被引：46

作者：

VANDENBREKEL, CHJ ^{[1
]}

JANSEN, AK ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1978年 / 43卷 / 03期

关键词：

D O I：

10.1016/0022-0248(78)90395-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：364 / 370

页数：7

共 30 条

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[10] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR [J].

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