DEPOSITION AND PROPERTIES OF SILICON ON GRAPHITE SUBSTRATES

被引：39

作者：

CHU, TL ^{[1
]}

MOLLENKOPF, HC ^{[1
]}

CHU, SSC ^{[1
]}

机构：

[1] SO METHODIST UNIV,DALLAS,TX 75275

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 01期

关键词：

D O I：

10.1149/1.2132739

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：106 / 110

页数：5

共 11 条

[1] LARGE AREA SILICON JUNCTIONS BY EPITAXIAL GROWTH TECHNIQUE [J].

CHU, TL ;

GRUBER, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (05) :522-&

[2] POLYCRYSTALLINE SILICON ON COATED STEEL SUBSTRATES [J].

CHU, TL ;

MOLLENKOPF, HC ;

CHU, SS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1681-1685

[3] POLYCRYSTALLINE SILICON SOLAR CELLS ON LOW-COST FOREIGN SUBSTRATES [J].

CHU, TL ;

LIEN, JC ;

MOLLENKOPF, HC ;

CHU, SC ;

HEIZER, KW ;

VOLTMER, FW ;

WAKEFIELD, GF .

SOLAR ENERGY, 1975, 17 (04) :229-235

[4]

CHU TL, 1965, ELECTROCHIM ACTA, V10, P1141

[5]

CHU TL, 1973, PB1213 NTIS, V1, P17

[6]

HUNT LP, 1972, J ELCHEM SO, V119, P1941

[7] PREPARATION OF HIGH-PURITY SILICON FROM SILANE [J].

LEWIS, CH ;

KELLY, HC ;

GIUSTO, MB ;

JOHNSON, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (12) :1114-1118

[8] BEHAVIOR OF LARGE-SCALE SURFACE PERTURBATIONS DURING SILICON EPITAXIAL GROWTH [J].

RUNYAN, WR ;

ALEXANDER, EG ;

CRAIG, SE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (11) :1154-+

[9]

SIRTL E, 1961, Z METALLKD, V52, P529

[10]

SMELTZER RK, 1974, FAL M EL SOC NEW YOR, P555

← 1 2 →