SOFT-X-RAY PHOTOEMISSION-STUDY OF CO-N-TYPE INP(110) INTERFACE

被引：14

作者：

KENDELEWICZ, T

LIST, RS

WILLIAMS, MD

BERTNESS, KA

LINDAU, I

SPICER, WE

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.34.558

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：558 / 562

页数：5

共 20 条

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[5] SCHOTTKY BARRIERS ON ATOMICALLY CLEAN N-INP (110) [J].

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LIST, RS ;

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[6] INTERFACIAL CHEMISTRY AND SCHOTTKY-BARRIER FORMATION OF THE NI/INP(110) AND NI/GAAS(110) INTERFACES [J].

KENDELEWICZ, T ;

WILLIAMS, MD ;

PETRO, WG ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1985, 32 (06) :3758-3765

[7] SYSTEMATICS OF INTERFACIAL CHEMICAL-REACTIONS ON INP(110) [J].

KENDELEWICZ, T ;

PETRO, WG ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :453-458

[8] ABSENCE OF CORE-EXCITON-INDUCED RESONANT PHOTOEMISSION FROM INP(110) [J].

KENDELEWICZ, T ;

LIST, RS ;

WILLIAMS, MD ;

LINDAU, I ;

SPICER, WE .

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[9]

KENDELEWICZ T, 1984, APPL PHYS LETT, V44, P1066, DOI 10.1063/1.94645

[10] INTERACTION OF AL OVERLAYERS WITH THE INP(110) SURFACE [J].

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PETRO, WG ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1984, 30 (10) :5800-5810

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