BAND-GAP AND SPIN-ORBIT-SPLITTING OF THE LATTICE-MATCHED GAASSB/INAS SYSTEM

被引：12

作者：

MANI, H

JOULLIE, A

JOULLIE, AM

GIRAULT, B

ALIBERT, C

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.337966

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2101 / 2103

页数：3

共 16 条

[1] MODULATION-SPECTROSCOPY STUDY OF THE GA1-XALXSB BAND-STRUCTURE [J].

ALIBERT, C ;

JOULLIE, A ;

JOULLIE, AM ;

ANCE, C .

PHYSICAL REVIEW B, 1983, 27 (08) :4946-4954

[2] LIQUID EPITAXIAL GROWTH OF GAASSB AND ITS USE AS A HIGH-EFFICIENCY, LONG-WAVELENGTH THRESHOLD PHOTOEMITTER [J].

ANTYPAS, GA ;

JAMES, LW .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :2165-&

[3] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].

ASPNES, DE .

SURFACE SCIENCE, 1973, 37 (01) :418-442

[4] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].

ASPNNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652

[5] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].

CHANG, CA ;

LUDEKE, R ;

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :759-761

[6]

COOPER CB, 1982, J ELECTRON MATER, V2, P1001

[7] GA1-XALXSB AVALANCHE PHOTO-DIODES - RESONANT IMPACT IONIZATION WITH VERY HIGH RATIO OF IONIZATION COEFFICIENTS [J].

HILDEBRAND, O ;

KUEBART, W ;

BENZ, KW ;

PILKUHN, MH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :284-288

[8] TEMPERATURE-DEPENDENCE OF THE L6C-GAMMA-6C ENERGY-GAP IN GALLIUM ANTIMONIDE [J].

JOULLIE, A ;

EDDIN, AZ ;

GIRAULT, B .

PHYSICAL REVIEW B, 1981, 23 (02) :928-930

[9] LOW-TEMPERATURE PHASE-DIAGRAM OF THE GA-AS-SB SYSTEM AND LIQUID-PHASE-EPITAXIAL GROWTH OF LATTICE-MATCHED GAASSB ON (100) INAS SUBSTRATES [J].

MANI, H ;

JOULLIE, A ;

KAROUTA, F ;

SCHILLER, C .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2728-2734

[10] GROWTH AND PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS1-XSBX [J].

NAHORY, RE ;

POLLACK, MA ;

DEWINTER, JC ;

WILLIAMS, KM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1607-1614

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