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ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE
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A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET)
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1984, 23 (02)
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ENERGY-GAP DISCONTINUITIES AND EFFECTIVE MASSES FOR GAAS-ALXGA1-XAS QUANTUM WELLS
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PHYSICAL REVIEW B,
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