THE FREQUENCY-DEPENDENT RELAXATION-TIME OF FREE-CARRIERS IN PBSNTE

被引：4

作者：

GOPAL, V

机构：

来源：

INFRARED PHYSICS | 1982年 / 22卷 / 04期

关键词：

D O I：

10.1016/0020-0891(82)90049-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：237 / 244

页数：8

共 10 条

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[4] VARIATION OF OPTICAL DIELECTRIC-CONSTANT WITH CARRIER CONCENTRATION - PBSNTE
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[6] MILLIMETRIC AND FAR-INFRARED CONDUCTIVITY OF P-SI - CASE FOR FREQUENCY-DEPENDENT CARRIER RELAXATION-TIME
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[8] THE OPTICAL (FREE-CARRIER) ABSORPTION OF A HOLE-ELECTRON PLASMA IN SILICON
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[J]. SOLID-STATE ELECTRONICS, 1980, 23 (12) : 1191 - 1194
[9] Moss TS., 1959, OPTICAL PROPERTIES S
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