WIDE BANDGAP II-VI COMPOUND SEMICONDUCTOR SUPERLATTICES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

ZnS-ZnSe and ZnS-ZnTe strained layer superlattices (SLSs) have been grown for the first time by metalorganic molecular beam epitaxy (MOMBE). The formation of the superlattice structures was confirmed by X-ray diffraction measurement. In the ZnS-ZnSe SLS, intense and sharp photoluminescence related to the quantized levels was observed at 71 K. We calculated the band discontinuities between ZnS and ZnSe for each strain. In the ZnS-ZnTe SLS, broad but very strong blue emission at around 460 nm attributed to the deep levels was observed even at 400 K.