METALORGANIC SURFACE CHEMICAL ADSORPTION DEPOSITION OF AIN FILMS BY AMMONIA AND TRIMETHYLALUMINUM

Experiments were carried out to investigate the feasibility of metalorganic surface chemical adsorption deposition (MOSCAD) for growing aluminum nitride (AIN). This technique tends to promote only surface reactions, confining the decomposition, interactions between intermediates and deposition processes necessary for crystal growth to the substrate surface. As a result, low-temperature deposition becomes possible. Epitaxial AIN growth was demonstrated at a temperature as low as 400-degrees-C. The AIN film, grown at a rate of 1.5-2.0-mu-m/h, was visually observed to be transparent with a specular surface. The examination of the film by scanning electron microscopy at a magnification of twenty thousand revealed the featureless surface. X-ray diffraction of the film exhibited a single peak associated with AIN. Quantitative analysis by Auger electron spectroscopy revealed that only Al and N were present in a ratio close to unity. These results indicate that MOSCAD is a viable alternative to MOCVD for AIN growth at a low temperature under atmospheric pressure.