EPITAXIAL-GROWTH OF ALN FILM WITH AN INITIAL-NITRIDING LAYER ON ALPHA-AL2O3 SUBSTRATE

[1] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[2] Anayama C., 1987, Record of Electrical and Communication Engineering Conversazione Tohoku University, V55, P16

[3] Duffy M. T., 1973, Journal of Electronic Materials, V2, P359, DOI 10.1007/BF02666163

[4] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J]. ELECTRONICS LETTERS, 1984, 20 (22) : 945 - 947

[5] Kagiwada R. S., 1978, 1978 Ultrasonics Symposium Proceedings, P598, DOI 10.1109/ULTSYM.1978.197110

[6] GROWTH MORPHOLOGY AND SURFACE-ACOUSTIC-WAVE MEASUREMENTS OF AIN FILMS ON SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3703 - 3706

[7] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1864 - +

[8] ALUMINUM NITRIDE EPITAXIALLY GROWN ON SILICON - ORIENTATION RELATIONSHIPS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L173 - L175

[9] EPITAXIAL-GROWTH OF ALUMINUM NITRIDE ON SAPPHIRE USING METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 17 - 23

[10] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[1] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[2] Anayama C., 1987, Record of Electrical and Communication Engineering Conversazione Tohoku University, V55, P16

[3] Duffy M. T., 1973, Journal of Electronic Materials, V2, P359, DOI 10.1007/BF02666163

[4] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J]. ELECTRONICS LETTERS, 1984, 20 (22) : 945 - 947

[5] Kagiwada R. S., 1978, 1978 Ultrasonics Symposium Proceedings, P598, DOI 10.1109/ULTSYM.1978.197110

[6] GROWTH MORPHOLOGY AND SURFACE-ACOUSTIC-WAVE MEASUREMENTS OF AIN FILMS ON SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3703 - 3706

[7] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1864 - +

[8] ALUMINUM NITRIDE EPITAXIALLY GROWN ON SILICON - ORIENTATION RELATIONSHIPS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L173 - L175

[9] EPITAXIAL-GROWTH OF ALUMINUM NITRIDE ON SAPPHIRE USING METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 17 - 23

[10] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462