LOW-TEMPERATURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION OF ALUMINUM NITRIDE WITH NITROGEN TRIFLUORIDE AS THE NITROGEN-SOURCE

被引：17

作者：

EDGAR, JH ^{[1
]}

YU, ZJ ^{[1
]}

AHMED, AU ^{[1
]}

RYS, A ^{[1
]}

机构：

[1] KANSAS STATE UNIV AGR & APPL SCI,DEPT ELECT & COMP ENGN,MANHATTAN,KS 66506

来源：

THIN SOLID FILMS | 1990年 / 189卷 / 02期

关键词：

D O I：

10.1016/0040-6090(90)90469-T

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：L11 / L14

页数：4

共 10 条

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[8] LOW-TEMPERATURE GROWTH OF GAN AND ALN ON GAAS UTILIZING METALORGANICS AND HYDRAZINE
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[10] REACTIVE MOLECULAR-BEAM EPITAXY OF ALUMINUM NITRIDE
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