LOW-TEMPERATURE GROWTH OF ALN AND AL2O3 FILMS BY THE SIMULTANEOUS USE OF A MICROWAVE ION-SOURCE AND AN IONIZED CLUSTER BEAM SYSTEM

被引：26

作者：

TAKAOKA, H ^{[1
]}

ISHIKAWA, J ^{[1
]}

TAKAGI, T ^{[1
]}

机构：

[1] KYOTO UNIV,DEPT ELECTR,SAKYO KU,KYOTO 606,JAPAN

来源：

THIN SOLID FILMS | 1988年 / 157卷 / 01期

关键词：

D O I：

10.1016/0040-6090(88)90355-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：143 / 158

页数：16

共 31 条

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[5] REACTIVELY SPUTTERED AIN FILMS FOR GAAS ANNEALING CAPS
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[6] STRUCTURE OF ALUMINUM-OXIDE FILMS DEPOSITED BY DC REACTIVE SPUTTERING
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[7] SYNTHESIS OF COMPOUND THIN-FILMS BY DUAL ION-BEAM DEPOSITION .1. EXPERIMENTAL APPROACH
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 550 - 555
[8] HARRISON WA, 1980, ELECTRONIC STRUCTURE, pCH2
[9] AXIAL MAGNETIC-FIELD EXTRACTION-TYPE MICROWAVE ION-SOURCE WITH A PERMANENT-MAGNET
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[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1984, 55 (04) : 449 - 456
[10] EFFECT OF PARTIAL-PRESSURE OF THE REACTANT GAS ON THE CHEMICAL VAPOR-DEPOSITION OF AL2O3
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[J]. THIN SOLID FILMS, 1982, 97 (01) : 97 - 106

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