RAPID THERMAL ANNEALING AND THE ANOMALOUS THRESHOLD VOLTAGE SHIFT OF METAL-OXIDE-SEMICONDUCTOR STRUCTURE IN N+ POLYCRYSTALLINE SILICON GATE COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY

被引：7

作者：

FANG, YK ^{[1
]}

HSIEH, JC ^{[1
]}

CHEN, CW ^{[1
]}

KOUNG, CH ^{[1
]}

TSAI, NS ^{[1
]}

LEE, JY ^{[1
]}

TSENG, FC ^{[1
]}

机构：

[1] TAIWAN SEMICOND MFG CO LTD,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 04期

关键词：

D O I：

10.1063/1.107910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An anomalous different threshold voltage shift between P-channel metal-oxide-semiconductor field effect transistor (P-MOSFET) and N-channel MOSFET under high temperature rapid thermal annealing (RTA) borophosphosilicate glass reflow has been studied using 1-mu-m n+ polygate complementary MOS technology. The boron transient enhanced outdiffusion and phosphorus pileup at channel surface, as well as the interface states generated due to the degradation of thin gate oxide under high RTA process, are proposed as the main sources of this anomalous shift. A detailed model is proposed to interpret the mechanism and some methods to solve the anomalous shift are suggested.

引用

页码：447 / 449

页数：3

共 9 条

[1] TRANSIENT ENHANCED DIFFUSION DURING RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON [J].